Si6423DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si6423DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 400 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 9.6 V, V_GS = 0 V
V_DS = - 9.6 V, V_GS = 0 V, T_J = 70_C
V_DS - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 9.5 A
V_GS = - 2.5 V, I_D = - 8.5 A
V_GS = - 1.8 V, I_D = - 7.5 A
V_DS = - 15 V, I_D = - 9.5 A
I_S = - 1.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 5 V, I_D = - 9.5 A
V_DD = - 6 V, R_L = 6 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 1.3 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 0.8
V
"100
nA
-1
mA
- 10
- 20
A
0.0068 0.0085
0.0085 0.0106
W
0.0112
0.014
45
S
- 0.58
- 1.1
V
74
110
9.0
nC
19
3.6
W
50
75
75
110
270
400
ns
200
300
160
250
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2 V
24
1.5 V
24
18
18
Transfer Characteristics
12
6
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
12
T_C = 125_C
6
25_C
- 55_C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_GS - Gate-to-Source Voltage (V)
Document Number: 72257
S-31419—Rev. A, 07-Jul-03