Si4963BDY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

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Comp_Sle_Pte_{ICE Device Model Si4963BDY}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = −250 µA
VDS = −5 V, VGS = −4.5 V
VGS = −4.5 V, ID = −6.5 A
VGS = −2.5 V, ID = −2 A
VDS = −10 V, ID = −6.5 A
IS = −1.7 A, VGS = 0 V
VDS = −10 V, VGS = −4.5 V, ID = − 6.5 A
VDD = −10 V, RL = 10 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
Simulated Measured
Data
Data
1.1
92
0.025
0.041
16
−0.80
0.025
0.040
18
−0.75
12
14
2.6
2.6
4.6
4.6
30
25
22
30
65
70
20
50
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
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2
Document Number: 72770
20-May-04