Si4894DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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Comp_Sle_Pte_{ICE Device Model Si4894DY}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
VGS(th)
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 µA
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 12.5 A
VGS = 4.5 V, ID = 10.2 A
VDS = 15 V, ID = 12.5 A
IS = 2.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 10 V, ID = 12.5 A
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
IF = 2.7 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Typical
1.25
398
0.010
0.015
31
0.70
19.2
3
4.5
10
15
22
40
30
Unit
V
A
Ω
S
V
nC
ns
www.vishay.com
2
Document Number: 71598
17-May-04