SUR50N024-06P Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175° MOSFET

SPICE Device Model SUR50N024-06P
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125°C
V_GS = 4.5 V, I_D = 20 A
I_S = 50 A, V_GS = 0 V
V_GS = 0 V, V_DS = 10 V, f = 1 MHz
V_DS = 10 V, V_GS = 4.5 V, I_D = 50 A
V_DD = 10 V, R_L = 0.20 Ω
I_D ≅ 50 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 50 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.4
964
0.0041
0.0057
0.0065
0.91
0.0046
0.0073
1.2
2418
816
348
20
7.5
6
11
10
9
9
31
2550
900
415
19
7.5
6
11
10
24
9
35
Unit
V
A
Ω
V
pF
nC
ns
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2
Document Number: 73019
S-60245Rev. B, 20-Feb-06