SUP90P06-09L_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Celsius MOSFET

SPICE Device Model SUP90P06-09L
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = − 250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −30 A
V_GS = −10V, I_D = −30 A, T_J = 125°C
V_GS = −10V, I_D = −30 A, T_J = 175°C
V_GS = −4.5 V, I_D = −20 A
V_DS = −15 V, I_D = −30 A
I_S = −50 A, V_GS = 0 V
V_GS = 0 V, V_DS = −25 V, f = 1 MHz
V_DS = −30 V, V_GS = −10 V, I_D = −90 A
V_DD = −30 V, R_L = 0.33 Ω
I_D ≅ −90 A, V_GEN = −10 V, R_G = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
2.1
644
0.0074
0.0116
0.0139
0.0092
76
−0.91
0.0074
0.0094
−1
8417
970
801
176
40
36
13
255
102
352
9200
975
760
160
40
36
20
190
140
300
Unit
V
A
Ω
S
V
pF
nC
ns
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2
Document Number: 73029
S-52635Rev. B, 02-Jan-06