SUP40N25-60_07 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 Celsius MOSFET

SPICE Device Model SUP40N25-60
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125°C
V_GS = 10 V, I_D = 20 A, T_J = 175°C
V_GS = 6 V, I_D = 15 A
I_F = 45 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 125 V, V_GS = 10 V, I_D = 45 A
V_DD = 100 V, R_L = 2.78 Ω
I_D ≅ 45 A, V_GEN = 10 V, R_G = 2.5 Ω
Simulated Measured
Data
Data
2.9
112
0.045
0.081
0.100
0.046
0.91
0.047
0.049
1
4977
326
229
92
28
34
35
35
56
44
5000
300
170
95
28
34
22
220
40
145
Unit
V
A
Ω
V
pF
nC
ns
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2
Document Number: 73144
S-71512Rev. B, 23-Jul-07