SUP36N20-54P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 150 Celsius MOSFET

SPICE Device Model SUP36N20-54P
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Forward Transconductance^a
g_fs
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250µA
V_DS ≥ 10 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 15 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 100°C
V_GS = 10 V, I_D = 20 A, T_J = 150°C
I_F = 40 A, V_GS = 0 V
V_DS = 15 V, I_D = 20 A
V_DS = 25 V, V_GS = 0 V, f = 1 MHz
V_DS = 100 V, V_GS = 15 V, I_D = 50 A
V_DS = 100 V, V_GS = 10 V, I_D = 50 A
Simulated Measured
Data
Data
3.1
211
0.047
0.046
0.072
0.090
0.90
0.044
0.0435
0.86
3309
323
148
79
57
14
20
3100
300
135
85
57
14
20
Unit
V
A
Ω
V
S
pF
nC
www.vishay.com
2
Document Number: 74350
S-62155Rev. A, 06-Nov-06