SUM90P10-19L Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

SPICE Device Model SUM90P10-19L
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
V_GS(th)
I_D(on)
r_DS(on)
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −20 A
V_GS = −4.5 V, I_D = −15 A
V_DS = −15 V, I_F = −20 A
V_DS = −.50 V, V_GS = 0 V, f = 1 MHz
V_DS = − 50 V, V_GS = −10 V, I_D = −90 A
V_DS = −50 V, V_GS = −4.5 V, I_D = −90 A
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
1.9
313
0.0157
0.88
0.0156
0.0173
0.80
10710
556
1214
117
42
51
11100
700
1690
217
97
42
51
Unit
V
A
Ω
V
pF
nC
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Document Number: 74169
S-61262Rev. A, 24-Jul-06