SUM85N03-06P_07 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175Celsius MOSFET

SPICE Device Model SUM85N03-06P
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125°C
V_GS = 4.5 V, I_D = 20 A
I_S = 100 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 50 A
V_DD = 15 V, R_L = 0.30 Ω
I_D ≅ 50 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 50 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.8
923
0.0044
0.008
0.0077
0.89
0.0053
0.0078
1.2
3135
509
177
47
10
7.5
10
14
26
33
31
3100
565
255
48
10
7.5
12
12
30
10
35
Unit
V
A
Ω
V
pF
nC
ns
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Document Number: 70114
S-71544Rev. B, 30-Jul-07