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SUM75N06-09L Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET
SUM75N06-09L
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 30 A
VGS = 4.5 V, ID = 30 A, TJ = 125_C
VGS = 4.5 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 90 A
VDD = 30 V, RL = 0.4 W
ID ] 90 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 90 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min
60
1
75
25
Typ Max Unit
V
2
3
"100
nA
1
50
mA
150
A
0.0075 0.0093
0.0163
0.024
W
0.0105 0.0135
0.0224
0.030
75
S
2400
430
pF
210
47
75
12
nC
13
7
12
30
50
ns
25
40
12
20
90
A
160
180
1.4
V
40
80
ns
2
4
A
0.040 0.16
mC
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2
Document Number: 72037
S-22123—Rev. A, 25-Nov-02