SUM60N10-17 Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SPICE Device Model SUM60N10-17
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 6 V, I_D = 20 A
V_GS = 10 V, I_D = 30 A, T_J = 125°C
V_GS = 10 V, I_D = 30 A, T_J = 175°C
I_F = 30 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 50 V, V_GS = 10 V, I_D = 60 A
V_DD = 50 V, R_L = 1.5 Ω
I_D ≅ 60 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 50 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
3.2
366
0.013
0.015
0.024
0.030
0.90
0.013
0.015
1
4377
482
239
57
25
19
25
12
17
10
110
4300
450
175
65
25
19
15
12
30
10
125
Unit
V
A
Ω
V
pF
nC
ns
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2
Document Number: 72140
09-Jun-04