SUM50N03 Datasheet, PDF (2/3 Pages) Vishay Siliconix – SPICE Device Model SUM50N03-13LC

SPICE Device Model SUM50N03-13LC
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 25 A
V_GS = 10 V, I_D = 25 A, T_J = 125°C
V_GS = 10 V, I_D = 25 A, T_J = 175°C
V_GS = 4.5 V, I_D = 24 A
I_S = 50 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 50 A
V_DD = 15 V, R_L = 0.30 Ω
I_D ≅ 50 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 50,A di/dt = 100 A/µs
Simulated Measured
Data
Data
1.8
434
0.010
0.016
0.018
0.014
0.90
0.010
0.016
0.018
0.014
1.3
2009
367
111
34
7.6
5.6
23
19
8
10
29
1960
380
180
35
7.6
5.6
10
93
30
10
35
Unit
V
A
Ω
V
pF
nC
ns
www.vishay.com
2
Document Number: 71918
09-Jun-04