SUM45N25-58 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET

SUM45N25-58
Vishay Siliconix
New Product
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "30 V
V_DS = 200 V, V_GS = 0 V
V_DS = 200 V, V_GS = 0 V, T_J = 125_C
V_DS = 200 V, V_GS = 0 V, T_J = 175_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125_C
V_GS = 10 V, I_D = 20 A, T_J = 175_C
V_GS = 6 V, I_D = 15 A,
V_DS = 15 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 125 V, V_GS = 10 V, I_D = 45 A
f = 1 MHz
V_DD = 100 V, R_L = 2.78 W
I_D ^ 45 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_S
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 45 A, V_GS = 0 V
I_F = 45 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
250
V
2
4
"250
nA
1
50
mA
250
70
A
0.047
0.058
0.121
W
0.163
0.049
0.062
70
S
5000
300
pF
170
95
140
28
nC
34
1.6
W
22
35
220
330
ns
40
60
145
220
45
A
70
1.0
1.5
V
150
225
ns
12
18
A
0.9
2
mC
www.vishay.com
2
Document Number: 72314
S-31515—Rev. A, 14-Jul-03