SUM23N15-73_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S), 175Celsius MOSFET

SPICE Device Model SUM23N15-73
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 10 V, I_D = 15 A, T_J = 125°C
V_GS = 10 V, I_D = 15 A, T_J = 175°C
V_GS = 6 V, I_D = 10 A
I_F = 23 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 75 V, V_GS = 10 V, I_D = 23 A
V_DD = 75 V, R_L = 3.26 Ω
I_D ≅ 23 A, V_GEN = 10 V, R_G = 2.5 Ω
Simulated Measured
Data
Data
3
84
0.059
0.011
0.134
0.064
0.89
0.059
0.062
1
1290
150
60
22
6
7.5
37
29
29
12
1290
160
70
22
6
7.5
10
60
30
45
Unit
V
A
Ω
V
pF
nC
ns
www.vishay.com
2
Document Number: 72331
S-60543Rev. B, 10-Apr-06