|
SUM110P06-08L_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Celsius MOSFET | |||
|
◁ |
SPICE Device Model SUM110P06-08L
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
VGS(th)
ID(on)
rDS(on)
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS = VGS, ID = â 250 µA
VDS = â5 V, VGS = â10 V
VGS = â10 V, ID = â30 A
VGS = â10 V, ID = â30 A, TJ = 125°C
VGS = â10 V, ID = â30 A, TJ = 175°C
VGS = â4.5 V, ID = â20 A
IF = â50 A, VGS = 0 V
VGS = 0 V, VDS = â25 V, f = 1 MHz
VDS = â30 V, VGS = â10 V, ID = â110 A
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
2
702
0.0068
0.0104
0.0123
0.0083
0.91
0.0065
0.0085
1
8857
975
760
175
40
36
9200
975
760
160
40
36
Unit
V
A
â¦
V
pF
nC
www.vishay.com
2
Document Number: 73055
S-60677Rev. B, 01-May-06
|
▷ |