SUM110P04-05 Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

SPICE Device Model SUM110P04-05
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = − 250 µA
V_DS ≥ −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −20 A
V_DS = −15 V, I_D = −20 A
I_S = −20 A
V_GS = 0 V, V_DS = −25 V, f = 1 MHz
V_DS = −20 V, V_GS = −10 V, I_D = −20 A
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
2.8
982
0.0040
126
−0.88
0.0041
75
−80
9687
1524
844
195
48
42
11300
1510
1000
185
48
42
Unit
V
A
Ω
S
V
pF
nC
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Document Number: 74144
S-52522Rev. A, 12-Dec-05