SUM110N04-2M7H Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET

SPICE Device Model SUM110N04-2m7H
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Forward Voltage ^a
Dynamic ^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time ^c
Rise Time ^c
Turn-Off Delay Time ^c
Fall Time ^c
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125°C
V_GS = 10 V, I_D = 30 A, T_J = 175°C
V_DS = 15 V, I_D = 30 A
I_S = 85 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 110 A
V_DD = 30 V, R_L = 0.27 Ω
I_D ≅ 110 A, V_GEN = 10 V, R_G = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
3.7
1170
0.0022
0.0031
0.0036
87
1
0.0022
1.1
12450
1429
786
262
95
57
43
101
75
43
15720
1400
800
250
95
57
50
150
70
25
Unit
V
A
Ω
S
V
Pf
NC
Ns
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Document Number: 72933
09-Jun-04