SUM110N04-05H Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175°C MOSFET

SPICE Device Model SUM110N04-05H
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125°C
V_GS = 10 V, I_D = 30 A, T_J = 175°C
I_F = 30 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 20 V, V_GS = 10 V, I_D = 50 A
Simulated Measured
Data
Data
3.6
704
0.0046
0.0076
0.0084
0.89
0.0044
0.90
6400
659
268
99
37
21
6700
600
320
95
37
21
Unit
V
A
Ω
V
pF
nC
www.vishay.com
2
Document Number: 73146
S-60676Rev. B, 01-May-06