SUM09N20-270_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S), 175Celsius MOSFET

SPICE Device Model SUM09N20-270
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
V_GS = 6 V, I_D = 5 A
V_GS = 10 V, I_D = 5 A, T_J = 125°C
V_GS = 10 V, I_D = 5 A, T_J = 175°C
I_F = 10 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 100 V, V_GS = 10 V, I_D = 10 A
V_DD = 100 V, R_L = 10 Ω
I_D ≅ 10 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 10 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.3
25
0.19
0.22
0.22
0.24
0.31
0.38
0.87
0.90
564
580
70
75
33
30
11.3
11
2.7
2.7
4
4
13
10
24
35
21
25
11
40
90
100
Unit
V
A
Ω
V
pF
nC
ns
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Document Number: 72264
S-60543Rev. B, 10-Apr-06