SUD50N06-09L_11 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 175Celsius MOSFET, Logic Level

SPICE Device Model SUD50N06-09L
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125°C
V_GS = 4.5 V, I_D = 15 A
I_F = 20 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 50 A
V_DD = 30 V, R_L = 0.60 Ω
I_D ≅ 50 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 20 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.6
601
0.0072
0.011
0.0094
0.89
0.0074
1
2572
506
235
47
10
12
28
7
9
6
39
2650
470
225
47
10
12
10
15
35
20
45
Unit
V
A
Ω
V
pF
nC
ns
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2
Document Number: 70117
S-60673Rev. B, 01-May-06