SUD50N06-08H Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 175c MOSFET

SPICE Device Model SUD50N06-08H
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current ^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance ^a
r_DS(on)
Forward Voltage ^a
V_SD
Dynamic ^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge ^c
Q_g
Gate-Source Charge ^c
Q_gs
Gate-Drain Charge ^c
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125°C
V_GS = 10 V, I_D = 20 A, T_J = 175°C
I_F = 50 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 50 A
Simulated Measured
Data
Data
3.5
662
0.0064
0.0096
0.0114
0.91
0.0065
1
6629
463
189
99
35
20
7000
450
240
94
35
20
Unit
V
A
Ω
V
pF
nC
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Document Number: 73185
20-Oct-04