SUD50N04-25P Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175°C MOSFET

SPICE Device Model SUU/SUD50N04-25P
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Forward Transconductance^a
g_fs
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 4.5 V, I_D = 10 A
I_S = 10 A
V_DS =15V, I_D = 15 A
V_DS = 20 V, V_GS = 0 V, f = 1 MHz
V_DS = 20 V, V_GS = 10 V, I_D = 30 A
V_DS = 20 V, V_GS = 4.5 V, I_D = 30 A
Simulated Measured
Data
Data
1.5
494
0.018
0.021
0.86
31
0.016
0.020
0.87
42
1376
152
68
22
11
3.2
4.2
1195
150
80
25
11.4
3.2
4.2
Unit
V
A
Ω
V
S
pF
nC
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2
Document Number: 74356
S-62520Rev. A, 18-Dec-06