SUD50N025-05P Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

SPICE Device Model SUD50N025-05P
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_GS(th)
I_D(on)
r_DS(on)
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 15 A
I_S = 30 A, V_GS = 0 V
V_DS = 12 V, V_GS = 0 V, f = 1 MHz
V_DS = 12 V, V_GS = 4.5 V, I_D = 50 A
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
1.8
V
1013
A
0.0041
0.0042
Ω
0.0063
0.0062
0.90
0.90
V
3956
3600
820
790
pF
338
430
30
30
10.5
10.5
nC
10.5
10.5
www.vishay.com
2
Document Number: 73393
S-50907Rev. A, 16-May-05