SUD45P03-15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S), 150C MOSFET

SUD45P03-15
Siliconix
Specifications (T_J = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V, T_J = 125_C
V_DS = –5 V, V_GS = –10 V
V_DS = –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = –13 A
V_GS = –10 V, I_D = –13 A, T_J = 125_C
V_GS = –4.5 V, I_D = –13 A
V_DS = –15 V, I_D = –13 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = –25 V, F = 1 MHz
V_DS = –15 V, V_GS = –10 V, I_D = –45 A
V_DD = –15 V, R_L = 0.33 W
I_D ^ –45 A, V_GEN = –10 V, R_G = 2.4 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
I_F = –45 A, V_GS = 0 V
I_F = –45 A, di/dt = 100 A/ms
Min Typ^a Max Unit
–30
V
–1.0
"100 nA
–1
mA
–50
–50
A
–20
0.012 0.015
0.018 0.026
W
0.020 0.024
20
S
3200
800
pF
280
50
125
14
nC
6.2
13
20
10
20
ns
50
100
20
40
100
A
1.0
1.5
V
55
100
ns
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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