SUD40N08-16_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 80-V (D-S) 175Celsius MOSFET

SPICE Device Model SUD40N08-16
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time ^c
Reverse Recovery Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 40 A
V_GS = 10 V, I_D = 40 A, T_J = 125°C
V_GS = 10 V, I_D = 40 A, T_J = 175°C
V_DS = 15 V, I_D = 40 A
I_S = 40 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 40 V, V_GS = 10 V, I_D = 40 A
V_DD = 40 V, R_L = 1 Ω
I_D ≅ 40 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 40 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature.
Simulated Measured
Data
Data
3.4
304
0.013
0.022
0.026
49
0.91
0.013
45
1
2091
438
248
39
7
13
19
29
31
40
38
1960
370
200
42
7
13
12
52
25
10
45
Unit
V
A
Ω
S
V
pF
nC
ns
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2
Document Number: 71713
S-60542Rev. B, 10-Apr-06