SUD40N02-08 Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 20-V (D-S), 175C MOSFET

SPICE Device Model SUD40N02-08
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 20 A
V_GS = 4.5 V, I_D = 20 A, T_J = 125°C
V_GS = 2.5 V, I_D = 20 A
I_F = 100 A, V_GS = 0 V
V_GS = 0 V, V_DS = 20 V, f = 1 MHz
V_DS = 10 V, V_GS = 4.5 V, I_D = 40 A
V_DD = 10 V, R_L = 0.25 Ω
I_D ≅ 40 A, V_GEN = 4.5 V, R_G = 2.5 Ω
I_F = 40 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
0.86
339
0.0065
0.0106
0.012
0.90
0.0068
0.0104
0.011
1.2
2753
768
304
26
5
7
19
30
76
49
31
2660
730
375
26
5
7
20
120
45
20
35
Unit
V
A
Ω
V
pF
nC
ns
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2
Document Number: 71017
05-Jun-04