SUD15N15-95_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175Celsius MOSFET

SPICE Device Model SUD15N15-95
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 10 V, I_D = 15 A, T_J = 125°C
V_GS = 10 V, I_D = 15 A, T_J = 175°C
V_GS = 6 V, I_D = 10 A
I_S = 15 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 75 V, V_GS = 10 V, I_D = 15 A
V_DD = 75 V, R_L = 5 Ω
I_D ≅ 15 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 15 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.6
71
0.069
0.115
0.139
0.080
0.89
0.077
0.081
0.90
897
900
126
115
73
70
21
20
5.5
5.5
7
7
12
8
19
35
36
17
41
30
48
55
Unit
V
A
Ω
V
pF
nC
ns
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Document Number: 71756
S-60409Rev. B, 20-Mar-06