ST1230C08K0LP Datasheet, PDF (2/7 Pages) Vishay Siliconix – Phase Control Thyristors (Hockey PUK Version), 1745 A

ST1230C..KP Series
Vishay High Power Products ^{Phase Control Thyristors}
(Hockey PUK Version), 1745 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
I_T(AV)
Maximum RMS on-state current
I_T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
I_TSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I²âˆšt
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
I_pk = 4000 A, T_J = T_J maximum, t_p = 10 ms sine pulse
T_J = 25 °C, anode supply 12 V resistive load
VALUES UNITS
1745 (700) A
55 (85)
°C
3200
33 500
35 100
A
28 200
29 500
5615
5126
3971
kA²s
3625
56 150
kA²âˆšs
0.93
V
1.02
0.17
mΩ
0.16
1.62
V
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t_d
t_q
TEST CONDITIONS
Gate drive 20 V, 20 Ω, t_r ≤ 1 µs
T_J = T_J maximum, anode voltage ≤ 80 % V_DRM
Gate current 1 A, dI_g/dt = 1 A/µs
V_d = 0.67 % V_DRM, T_J = 25 °C
I_TM = 550 A, T_J = T_J maximum, dI/dt = 40 A/µs,
V_R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t_p = 500 µs
VALUES
1000
1.9
200
UNITS
A/µs
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum linear to 80 % rated V_DRM
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES UNITS
500
V/µs
100
mA
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Document Number: 94395
Revision: 11-Aug-08