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ST1200C12K0P Datasheet, PDF (2/9 Pages) Vishay Siliconix – Phase Control Thyristors | |||
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VS-ST1200C..K Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state currentï
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycleï
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2ït
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine waveï
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
No voltage
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES UNITS
1650 (700) A
55 (85)
°C
3080
30 500
32 000
A
25 700
26 900
4651
4250
3300
kA2s
3000
46 510 kA2ïs
0.91
V
1.01
0.21
mï
0.19
1.73
V
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate ofï
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 ï, tr ï£ 1 μsï
TJ = TJ maximum, anode voltage ï£ 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μsï
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, ï
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 ï, tp = 500 μs
VALUES
1000
1.9
200
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of ï
off-state voltage
Maximum peak reverse and ï
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500
V/μs
100
mA
Revision: 09-Jan-15
2
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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