SQS460EN Datasheet, PDF (2/13 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQS460EN
Vishay Siliconix
SPECIFICATIONS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
V_GS(th)
I_GSS
V_DS = V_GS, I_D = 250 μA
V_DS = 0 V, V_GS = ± 20 V
V_GS = 0 V
V_DS = 60 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_GS = 0 V
V_GS = 0 V
V_GS = 10 V
V_DS = 60 V, T_J = 125 °C
V_DS = 60 V, T_J = 175 °C
V_DS5 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V
V_GS = 10 V
V_GS = 10 V
I_D = 5.3 A
I_D = 5.3 A, T_J = 125 °C
I_D = 5.3 A, T_J = 175 °C
Forward Transconductance^b
Dynamic^b
V_GS = 4.5 V
I_D = 4 A
g_fs
V_DS = 15 V, I_D = 5 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V
V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
Gate-Drain Charge^c
Q_gd
Gate Resistance
R_g
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
Turn-Off Delay Time^c
t_d(off)
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics^b
V_GS = 10 V
V_DS = 30 V, I_D = 4.5 A
f = 1 MHz
V_DD = 30 V, R_L = 30 
I_D  1 A, V_GEN = 10 V, R_g = 1 
Pulsed Current^a
I_SM
Forward Voltage
V_SD
I_F = 6 A, V_GS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
60
1.5
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
1.70
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
2.0
2.5
-
± 100 nA
-
1
-
50
μA
-
150
-
-
A
0.030 0.036
-
0.066

-
0.082
0.040 0.048
16
-
S
603 755
113 145 pF
50
65
13
20
1.7
-
nC
3
-
3.73 6.00

5
8
8
12
ns
19
29
8
11
-
32
A
0.8
1.2
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2364-Rev. C, 15-Oct-12
2
Document Number: 72642
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000