SL04_16 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier Surface Mount

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SL04
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
Typical junction capacitance
I_F = 0.5 A
I_F = 1.1 A
T_J = 25 °C
I_F = 0.5 A
I_F = 1.1 A
T_J = 100 °C
I_F = 0.5 A
I_F = 1.1 A
T_J = 125 °C
T_J = 25 °C
V_R = 40 V
T_J = 100 °C
T_J = 125 °C
V_R = 4.0 V, 1 MHz
V_F ⁽¹⁾
I_R
C_D
0.41
0.48
0.34
0.43
0.31
0.42
10
1.2
4.5
65
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycleï€} 
MAX.
0.47
0.54
-
-
-
-
20
2.6
13
-
UNIT
V
μA
mA
mA
pF
RATINGS AND CHARACTERISTICS CURVES (T_amb = 25 °C, unless otherwise specified)
10
1
0.1
0.01
0.001
0.00
0.20
0.40 0.60
V_F [V]
typical at 25 °C
typical at 100 °C
typical at 125 °C
typical at 150 °C
0.80 1.00 1.20
Fig. 1 - Typical Forward Characteristics
1.0E+0
100.0E-3
10.0E-3
T_J at 25 °C
T_J at 100 °C
T_J at 150 °C
T_J at 75 °C
T_J at 125 °C
T_J at 175 °C
1.0E-3
100.0E-6
10.0E-6
1.0E-6
100.0E-9
0
10
20
30
40
V_R [V]
Fig. 3 - Typical Reverse Characteristics
200
180
160
140
120
100
80
60
40
20
0
0.1
f = 1 MHz
1
10
100
V_R [V]
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
R_thJL = 22K/W
R_thJA = 180K/W
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 4 - Forward Current Derating Curve
Rev. 1.0, 27-Apr-16
2
Document Number: 85942
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