SIRA96DP Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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SiRA96DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Drain-source breakdown voltage (transient) ^c
V_DS temperature coefficient
V_GS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current ^a
Drain-source on-state resistance ^a
Forward transconductance ^a
Dynamic ^b
V_DS
V_DSt
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 μA
V_GS = 0 V, I_D(aval) = 15 A, t_transient = 50 ns
I_D =10 mA
I_D = 250 μA
V_DS = V_GS, I_D =250 μA
V_DS = 0 V, V_GS = +20 / -16 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 70 °C
V_DS  10 V, V_GS = 10 V
V_GS = 10 V, I_D = 10 A
V_GS = 4.5 V, I_D = 10 A
V_DS = 15 V, I_D = 10 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
C_iss
C_oss
C_rss
Q_g
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 10 A
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 15 V, V_GS = 4.5 V, I_D = 10 A
f = 1 MHz
V_DD = 15 V, R_L = 1.5 , I_D  10 A,
V_GEN = 10 V, R_g = 1 
V_DD = 15 V, R_L = 1.5 , I_D  10 A,
V_GEN = 4.5 V, R_g = 1 
Continuous source-drain diode current
I_S
T_C = 25 °C
Pulse diode forward current
I_SM
Body diode voltage
V_SD
I_S = 5 A, V_GS = 0 V
Body diode reverse recovery time
t_rr
Body diode reverse recovery charge
Reverse recovery fall time
Q_rr
I_F = 10 A, dI/dt = 100 A/μs,
t_a
T_J = 25 °C
Reverse recovery rise time
t_b
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. T_CASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.
MIN.
30
36
-
-
1
-
-
-
30
-
-
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
13
-4.7
-
-
-
-
-
0.0073
0.0092
70
-
-
-
-
2.2
100
1
15
-
0.0088
0.0120
-
V
mV/°C
V
nA
μA
A

S
1385
-
478
-
pF
37
-
20.5
31
9.9
15
nC
4.2
-
2.5
-
0.73
1.4

8
16
25
50
13
26
9
18
ns
12
24
47
94
15
30
25
50
-
16
A
-
50
0.77
1.1
V
50
100
ns
75
150
nC
43
-
ns
7
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2271-Rev. A, 14-Nov-16
2
Document Number: 76345
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000