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SIHW47N60EF Datasheet, PDF (2/7 Pages) Vishay Siliconix – EF Series Power MOSFET with Fast Body Diode
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SiHW47N60EF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.33
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 24 A
VDS = 30 V, ID = 24 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V
ID = 24 A, VDS = 480 V
VDD = 480 V, ID = 24 A,
VGS = 10 V, Rg = 4.4 
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the 
D
integral reverse
G
Pulsed Diode Forward Current
ISM
p - n junction diode
S
MIN. TYP. MAX. UNIT
600
-
-
V
-
-
V/°C
2.0
-
4.0
V
-
- ± 100 nA
-
-
±1
μA
-
-
1
μA
-
-
500
-
0.056 0.065 
-
17
-
S
-
5000
-
-
220
-
-
7
-
pF
-
172
-
-
634
-
-
152 228
-
32
-
nC
-
62
-
-
30
60
-
56
84
ns
-
91
137
-
56
84
0.2 0.46 1.0

-
-
47
A
-
-
138
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 24 A, VGS = 0 V
TJ = 25 °C, IF = IS = 24 A,
dI/dt = 100 A/μs, VR = 400 V
-
0.9
1.2
V
-
199 398 ns
-
1.4
2.8
μC
-
13.2
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S17-0298-Rev. F, 27-Feb-17
2
Document Number: 91560
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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