SIHP12N65E Datasheet, PDF (2/8 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHP12N65E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R_thJA
R_thJC
TYP.
-
-
MAX.
62
0.8
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
I_DSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related ^a
Effective Output Capacitance, Time
Related ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
R_DS(on)
g_fs
C_iss
C_oss
C_rss
C_o(er)
C_o(tr)
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
V_GS = 0 V, I_D = 250 μA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 μA
V_GS = ± 20 V
V_GS = ± 30 V
V_DS = 650 V, V_GS = 0 V
V_DS = 520 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 6 A
V_DS = 30 V, I_D = 6 A
V_GS = 0 V,
V_DS = 100 V,
f = 1 MHz
V_DS = 0 V to 520 V, V_GS = 0 V
V_GS = 10 V
I_D = 6 A, V_DS = 520 V
V_DD = 520 V, I_D = 6 A,
V_GS = 10 V, R_g = 9.1 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
I_SM
p - n junction diode
S
MIN. TYP.
650
-
-
0.78
2
-
-
-
-
-
-
-
-
-
-
0.33
-
3.5
-
1224
-
65
-
4
-
50
-
160
-
35
-
9
-
16
-
16
-
19
-
35
-
18
-
0.81
-
-
-
-
Diode Forward Voltage
V_SD
T_J = 25 °C, I_S = 6 A, V_GS = 0 V
-
1.0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
t_rr
Q_rr
I_RRM
T_J = 25 °C, I_F = I_S = 6 A,
dI/dt = 100 A/μs, V_R = 25 V
-
309
-
3.8
-
21
Notes
a. C_oss(er) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
b. C_oss(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
MAX. UNIT
-
-
4
± 100
±1
1
10
0.38
-
V
V/°C
V
nA
μA
μA
Ω
S
-
-
-
pF
-
-
70
-
nC
-
32
38
ns
70
36
-
Ω
12
A
28
1.2
V
618 ns
7.6 μC
-
A
S15-0399-Rev. D, 16-Mar-15
2
Document Number: 91554
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000