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SIHH14N65EF Datasheet, PDF (2/9 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode
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SiHH14N65EF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
42
0.57
MAX.
55
0.80
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 10 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 520 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 7 A
VDS = 30 V, ID = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 520 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 7 A, VDS = 520 V
VDD = 520 V, ID = 7 A,
VGS = 10 V, Rg = 9.1 
f = 1 MHz, open drain
MOSFET symbol
Continuous Source-Drain Diode Current
IS
showing the 
D
integral reverse
G
Pulsed Diode Forward Current
ISM
p - n junction diode
S
MIN. TYP.
650
-
-
0.73
2.0
-
-
-
-
-
-
-
-
-
-
0.236
-
6.0
-
1749
-
82
-
4
-
57
-
228
-
49
-
11
-
20
-
21
-
28
-
56
-
29
0.35 0.70
-
-
-
-
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 7 A, VGS = 0 V
TJ = 25 °C, IF = IS = 7 A,
dI/dt = 100 A/μs, VR = 25 V
-
0.9
-
120
-
0.6
-
10
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
MAX.
-
-
4.0
± 100
±1
1
500
0.271
-
-
-
-
-
-
98
-
-
42
56
84
58
1.4
15
36
1.2
240
1.2
-
UNIT
V
V/°C
V
nA
μA
μA

S
pF
nC
ns

A
V
ns
μC
A
S16-0232-Rev. A, 15-Feb-16
2
Document Number: 91773
For technical questions, contact: hvm@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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