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SIHG24N65E_13 Datasheet, PDF (2/8 Pages) Vishay Siliconix – E Series Power MOSFET
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SiHG24N65E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relateda
Effective Output Capacitance, Time
Relatedb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 A
VDS = 8 V, ID = 5 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 520 V, VGS = 0 V
VGS = 10 V
ID = 12 A, VDS = 520 V
VDD = 520 V, ID = 12 A,
VGS = 10 V, Rg = 9.1 
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM
p - n junction diode
S
MIN.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.72
-
-
-
-
0.120
7.1
-
-
4
± 100
1
10
0.145
-
V
V/°C
V
nA
μA

S
2740
-
pF
122
-
4
-
93
-
352
-
81
122
21
-
nC
37
-
24
48
84
126
ns
70
105
69
104
0.68
-

-
24
A
-
70
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 12 A, VGS = 0 V
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 12 A,
dI/dt = 100 A/μs, VR = 25 V
-
433
-
ns
-
7.3
-
μC
-
28
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S12-3104-Rev. F, 24-Dec-12
2
Document Number: 91476
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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