SIHF22N65E Datasheet, PDF (2/8 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHF22N65E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R_thJA
R_thJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
I_DSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related ^a
Effective Output Capacitance, Time
Related ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
R_DS(on)
g_fs
C_iss
C_oss
C_rss
C_o(er)
C_o(tr)
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
V_GS = 0 V, I_D = 250 μA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 μA
V_GS = ± 20 V
V_GS = ± 30 V
V_DS = 650 V, V_GS = 0 V
V_DS = 520 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 11 A
V_DS = 8 V, I_D = 5 A
V_GS = 0 V,
V_DS = 100 V,
f = 1 MHz
V_DS = 0 V to 520 V, V_GS = 0 V
V_GS = 10 V
I_D = 11 A, V_DS = 520 V
V_DD = 520 V, I_D = 11 A,
V_GS = 10 V, R_g = 9.1 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
I_SM
p - n junction diode
S
MIN.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.74
-
-
-
-
-
0.15
6.7
2415
118
4
89
307
73
15
32
22
33
73
38
0.64
-
-
Diode Forward Voltage
V_SD
T_J = 25 °C, I_S = 11 A, V_GS = 0 V
-
-
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
t_rr
Q_rr
I_RRM
T_J = 25 °C, I_F = I_S = 11 A,
dI/dt = 100 A/μs, V_R = 400 V
-
400
-
5.9
-
20
Notes
a. C_oss(er) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
b. C_oss(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
MAX. UNIT
-
-
4
± 100
±1
1
10
0.18
-
V
V/°C
V
nA
μA
μA
Ω
S
-
-
-
pF
-
-
110
-
nC
-
45
66
ns
110
76
-
Ω
22
A
56
1.2
V
-
ns
-
μC
-
A
S15-0291-Rev. B, 23-Feb-15
2
Document Number: 91537
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000