SIHD7N60E-GE3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHD7N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R_thJA
R_thJC
TYP.
-
-
MAX.
62
1.6
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related^a
Effective Output Capacitance, Time
Related^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
V_DS
V_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
C_o(er)
C_o(tr)
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
V_GS = 0 V, I_D = 250 μA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 μA
V_GS = ± 20 V
V_DS = 600 V, V_GS = 0 V
V_DS = 480 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 3.5 A
V_DS = 50 V, I_D = 3.5 A
V_GS = 0 V,
V_DS = 100 V,
f = 1 MHz
V_DS = 0 V to 480 V, V_GS = 0 V
V_GS = 10 V I_D = 3.5 A, V_DS = 480 V
V_DD = 480 V, I_D = 3.5 A,
V_GS = 10 V, R_g = 9.1 
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the 
D
integral reverse
G
Pulsed Diode Forward Current
I_SM
p - n junction diode
S
MIN.
609
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.68
-
V/°C
-
4
V
- ± 100 nA
-
1
μA
-
10
0.5
0.6

1.9
-
S
680
-
39
-
5
-
pF
34
-
100
-
20
40
5
-
nC
9
-
13
26
13
26
ns
24
48
14
28
1.1
-

-
7
A
-
18
Diode Forward Voltage
V_SD
T_J = 25 °C, I_S = 3.5 A, V_GS = 0 V
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
t_rr
Q_rr
I_RRM
T_J = 25 °C, I_F = I_{S = 3.5 A},
dI/dt = 100 A/μs^{, VR} = 20 V
-
230
-
ns
-
1.9
-
μC
-
14
-
A
Notes
a. C_oss(er) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
b. C_oss(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
S13-1419-Rev. C, 01-Jul-13
2
Document Number: 91510
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000