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SIHA21N60EF Datasheet, PDF (2/8 Pages) Vishay Siliconix – EF Series Power MOSFET with Fast Body Diode
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THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
SiHA21N60EF
Vishay Siliconix
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
600
Reference to 25 °C, ID = 1 mA
-
VDS = VGS, ID = 250 μA
2.0
VGS = ± 20 V
-
VGS = ± 30 V
-
VDS = 480 V, VGS = 0 V
-
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
VGS = 10 V
ID = 11 A
-
VDS = 30 V, ID = 11 A
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time 
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
-
VDS = 100 V,
-
f = 1 MHz
-
-
VGS = 0 V, VDS = 0 V to 480 V
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
-
VGS = 10 V
ID = 11 A, VDS = 480 V
-
-
-
VDD = 480 V, ID = 11 A
-
Rg = 9.1 , VGS = 10 V
-
-
f = 1 MHz, open drain
0.2
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the 
D
-
Pulsed Diode Forward Current
integral reverse
G
ISM
p - n junction diode
S
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 V
-
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
-
TJ = 25 °C, IF = IS = 11 A,
dI/dt = 100 A/μs, VR = 400 V
-
-
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS.
TYP. MAX. UNIT
-
0.59
-
-
-
-
-
0.153
7
-
-
4.0
± 100
±1
1
500
0.176
-
V
V/°C
V
nA
μA
μA

S
2030
-
105
-
5
-
pF
86
-
299
-
56
84
14
-
nC
24
-
21
42
31
62
ns
59
89
27
54
0.56 1.2

-
21
A
-
53
0.9
1.2
V
135
270
ns
0.76 1.52 μC
11
-
A
S17-0299-Rev. D, 27-Feb-17
2
Document Number: 91597
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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