SIB415DK Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model SiB415DK
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_DS ≥ −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −4.17 A
V_GS = −4.5 V, I_D = −3.1 A
V_DS = −15 V, I_D = −4.17 A
I_S = −3.2 A
V_DS = −15 V, V_GS = 0 V, f = 1 MHz
V_DS = −15 V, V_GS = −10 V, I_D = −4.17 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −15 V, V_GS = −4.5 V, I_D = −4.17 A
Simulated Measured
Data
Data
2
58
0.073
0.124
8
−0.83
0.072
0.130
5.5
−0.80
345
295
72
70
51
50
5.6
6.7
3
3.5
1
1
1.78
1.78
Unit
V
A
Ω
S
V
pF
nC
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2
Document Number: 74873
S-71023Rev. A, 14-May-07