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SIA917DJ Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET | |||
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SPICE Device Model SiA917DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
VDS = VGS, ID = â250 µA
VDS ⤠â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â3.3 A
VGS = â2.5 V, ID = â2.5 A
VDS = â4 V, ID = â3.3 A
IS = â2.6 A
VDS = â10 V, VGS = 0 V, f = 1 MHz
VDS = â10 V, VGS = â10 V, ID = â3.3 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
VDS = â10 V, VGS = â4.5 V, ID = â3.3 A
Simulated Measured
Data
Data
1.2
31
0.093
0.144
7.2
â0.82
0.091
0.152
3.5
â0.80
295
250
71
70
40
45
4.5
6
2.4
3
0.70
0.70
0.90
0.90
Unit
V
A
â¦
S
V
pF
nC
www.vishay.com
2
Document Number: 74899
S-71470Rev. A, 23-Jul-07
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