SIA911ADJ Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SPICE Device Model SiA911ADJ
Vishay Siliconix
SPECIFICATIONS (T = 25 °C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V_GS(th)
R
DS(on)
Forward Transconductance^a
g
fs
Diode Forward Voltage
V
SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V = V , I = - 250 μA
DS
GS D
V = - 4.5 V, I = - 2.8 A
GS
D
V = - 2.5 V, I = - 2.3 A
GS
D
V = - 10 V, I = - 2.8 A
DS
D
I =-1A
S
V = - 10 V, V = 0 V, f = 1 MHz
DS
GS
V = - 10 V, V = - 8 V, I = - 3.5 A
DS
GS
D
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 3.5 A
Simulated Measured
Data
Data
0.83
0.097
0.126
7
- 0.79
0.096
0.126
7
- 0.80
332
345
75
65
61
50
7
8.4
4.2
4.9
0.75
0.75
1.2
1.2
Unit
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 64500
S-82729-Rev. A, 17-Nov-08