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SIA421DJ Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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SPICE Device Model SiA421DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
VDS = VGS, ID = â250 µA
VDS ⥠â5 V, VGS = â4.5 V
VGS = â10 V, ID = â5.3 A
VGS = â4.5 V, ID = â4.2 A
VDS = â15 V, ID = â5.3 A
IS = â6.3 A
VDS = â15 V, VGS = 0 V, f = 1 MHz
VDS = â15 V, VGS = â10 V, ID = â7.9 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
VDS = â15 V, VGS = â4.5 V, ID = â7.9 A
Simulated Measured
Data
Data
2.1
145
0.032
0.046
14
â0.90
0.029
0.046
15
â0.80
983
950
153
150
105
120
17
19
9
10
3
3
4.5
4.5
Unit
V
A
â¦
S
V
pF
nC
www.vishay.com
2
Document Number: 69474
S-71914Rev. A, 17-Sep-07
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