SIA419DJ Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SPICE Device Model SiA419DJ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −5.9 A
V_GS = −2.5 V, I_D = −5.1 A
V_GS = −1.8 V, I_D = −2 A
V_DS = −10 V, I_D = −5.9 A
I_S = −7 A
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
V_DS = −10 V, V_GS = −5 V, I_D = −8.8 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −10 V, V_GS = −4.5 V, I_D = −8.8 A
Simulated Measured
Data
Data
0.66
165
0.027
0.033
0.043
46
−0.94
0.025
0.032
0.042
20
−0.80
1550
203
135
14
13
2.1
5.2
1500
210
150
19
17.5
2.1
5.2
Unit
V
A
Ω
S
V
pF
nC
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Document Number: 74896
S-71495Rev. A, 23-Jul-07