SIA414DJ Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual N-Channel 8-V (D-S) MOSFET

SPICE Device Model SiA414DJ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS ≤ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 9.7 A
V_GS = 2.5 V, I_D = 9 A
V_GS = 1.8 V, I_D = 8.1 A
V_DS = 6 V, I_D = 9.7A
I_S = 10 A
V_DS = 4 V, V_GS = 0 V, f = 1 MHz
V_DS = 4 V, V_GS = 5 V, I_D = 10 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 4 V, V_GS = 4.5 V, I_D = 10 A
Simulated Measured
Data
Data
0.57
423
0.009
0.011
0.013
49
0.84
0.009
0.011
0.013
50
0.80
1872
608
447
17
16
2.5
6.5
1800
650
450
21
19
2.5
6.5
Unit
V
A
Ω
S
V
pF
nC
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Document Number: 69167
S-71632Rev. A, 06-Aug-07