SI9933CDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si9933CDY
Vishay Siliconix
SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V_GS(th)
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage
V_SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V = V , I = −250 μA
DS
GS D
V = −4.5 V, I = −4.8 A
GS
D
V = −2.5 V, I = −1 A
GS
D
V = −10 V, I = −4.8 A
DS
D
I = −3.8 A
S
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
V = −10 V, V = −10 V, I = −4.8 A
DS
GS
D
V_DS = −10 V, V_GS = −4.5 V, I_D = −4.8 A
Simulated Measured
Data
Data
0.89
0.048
0.072
12
−0.84
0.048
0.075
11
−0.77
662
665
140
140
113
115
14
17
7
8
2
2
3
3
Unit
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 64515
S-83055⎯Rev. A, 19-Jan-09