SI9913 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual MOSFET Bootstrapped Driver with Break-Before-Make

Si9913
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Low Side Driver Supply Voltage
Input Voltage on IN
Synchronous Pin Voltage
Bootstrap Voltage
High Side Driver (Bootstrap) Supply Voltage
Operating Junction Temperature Range
Storage Temperature Range
Power Dissipation (Note a and b)
Thermal Impedance
Lead Temperature (soldering 10 Sec)
V_DD
V_IN
V_SYN
V_BOOT
V_BOOT – V_S
T_J
T_stg
P_D
q_JA
Sec
7.0
–0.3 to V_DD +0.3
–0.3 to V_DD +0.3
35.0
7.0
–40 to 125
–40 to 150
830
125
300
V
_C
mW
°C/W
°C
Notes
a. Device mounted with all leads soldered to P.C. Board
b. Derate 8.3 W/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Bootstrap Voltage (High-Side Drain Voltage)
Logic Supply
Bootstrap Capacitor
Ambient Temperature
Symbol
V_BOOT
V_DD
C_BOOT
T_A
Limit
4.5 to 30
4.5 to 5.5
100 n to 1 m
–40 to 85
Unit
V
F
_C
SPECIFICATIONS
Parameter
Power Supplies
V_DD Supply
I_DD Supply
I_DD Supply
I_DD Supply
I_DD Supply
I_DD Supply
I_DD Supply
Boot Strap Current
Reference Voltage
Break-Before-Make Reference Voltage
Logic Inputs (SYN, IN)
Input High
Input Low
Undervoltage Lockout
V_DD Undervoltage
V_DD Undervoltage Hysteresis
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2
Symbol
Test Conditions Unless Specified
V_BOOT = 4.5 to 30 V, V_DD = 4.5 to 5.5 V
T_A = –40 to 85_C
Min^a
Limits
Typ^b
Max^a
Unit
V_DD
4.5
I_DD1 (en)
SYN = H, IN = H, V_S = 0 V
I_DD2(en)
SYN = H, IN = L, V_S = 0 V
I_DD3(dis)
SYN = L, IN = X, V_S = V
I_DD4(en)
SYN = H, IN = X, V_S = 25 V, V_BOOT = 30 V
I_DD5(dis)
SYN = L, IN = X, V_S = 25 V, V_BOOT = 30 V
I_DD(en)
F_IN = 300 kHz, SYN = High, Driving 2 X Si4412DY
I_DD(dis)
F_IN = 300 kHz, SYN = Low, Driving 2 X Si4412DY
I_BOOT
V_BOOT = 30 V, V_S = 25 V, V_OUTH = H
0.9
5.5
1000
500
mA
500
200
200
9
5
mA
3
V_BBM
1.1
3
V
V_IH
0.7 V_DD
V_DD + 0.3
V_IL
–0.3
0.3 V_DD
V
V_UVL
V_HYST
V_DD Rising
3.7
4.3
V
0.4
Document Number: 71343
S-02882—Rev. A, 21-Dec-00