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| SI9912 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Half-Bridge MOSFET Driver for Switching Power Supplies | |||
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Si9912
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Low Side Driver Supply Voltage
Input Voltage on IN
VDD
7.0
VIN
â0.3 to VDD +0.3
Shutdown Pin Voltage
VSD
â0.3 to VDD +0.3
V
Bootstrap Voltage
VBOOT
35.0
High Side Driver (Bootstrap) Supply Voltage
VBOOT â VS
7.0
Operating Junction Temperature Range
Storage Temperature Range
TJ
â40 to 125
_C
Tstg
â40 to 150
Power Dissipation (Note a and b)
Thermal Impedance
Lead Temperature (soldering 10 Sec)
PD
830
mW
qJA
125
°C/W
300
°C
Notes
a. Device mounted with all leads soldered to P.C. Board
b. Derate 8.3 W/_C above 25_C
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Bootstrap Voltage (High-Side Drain Voltage)
Logic Supply
Bootstrap Capacitor
Ambient Temperature
Symbol
VBOOT
VDD
CBOOT
TA
Limit
4.5 to 30
4.5 to 5.5
100 n to 1 m
â40 to 85
Unit
V
F
_C
SPECIFICATIONS
Parameter
Power Supplies
VDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
Boot Strap Current
Reference Voltage
Break-Before-Make Reference Voltage
Logic Inputs (SD, IN)
Input High
Input Low
Undervoltage Lockout
VDD Undervoltage
VDD Undervoltage Hysteresis
Symbol
Test Conditions Unless Specified
VDD = 4.5 to 5.5 V
VBOOT = 4.5 to 30 V, TA = â40 to 85_C
Mina
Limits
Typb
Maxa
Unit
VDD
4.5
IDD1(en)
SD = H, IN = H, VS = 0 V
IDD2(en)
SD = H, IN = L, VS = 0 V
IDD3(dis)
SD = L, IN = X, VS = 0 V
IDD4(en)
SD = H, IN = X, VS = 25 V, VBOOT = 30 V
IDD5(dis)
IDD(en)
IDD(dis)
SD = L, IN = X, VS = 25 V, VBOOT = 30 V
FIN = 300 kHz, SD = High, Driving Si4412DY
FIN = 300 kHz, SD = Low, Driving Si4412DY
IBOOT
VBOOT = 30 V, VS = 25 V, VOUTH = High
0.9
1000
500
mA
5
200
5
9
mA
3
mA
3
mA
VBBM
1.1
3
V
VIH
0.7 VDD
VDD + 0.3
V
VIL
â0.3
0.3 VDD
VUVL
VHYST
VDD Rising
3.7
4.3
V
0.4
www.vishay.com
2
Document Number: 71311
S-40134âRev. B, 16-Feb-04
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