SI8904EDB Datasheet, PDF (2/3 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

SPICE Device Model Si8904EDB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
V_GS(th)
I_SS(on)
R_SS(on)
Forward Transconductance^a
G_fs
Dynamic^b
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_SS = V_GS, I_D = 250 µA
V_SS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_SS = 1 A
V_GS = 2.5 V, I_SS = 1 A
V_SS = 10 V, I_SS= 1 A
V_SS = 10 V, R_L = 10 Ω
I_SS ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
1.1
68
0.038
0.049
23
0.037
0.048
12
1.4
1.6
2.5
2
1.1
1.5
3.3
3.7
Unit
V
A
Ω
S
µs
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2
Document Number: 72971
S-60075Rev. B, 23-Jan-05