SI8902EDB_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

SPICE Device Model Si8902EDB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_ss(on)
Drain-Source On-State Resistance^a
R_sS(on)
Forward Transconductance^a
g_fs
Dynamic^b
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_sS = V_GS, I_D = 250 µA
V_sS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_ss = 1 A
V_GS = 3.7 V, I_ss = 1 A
V_GS = 2.5 V, I_ss = 1 A
V_GS = 1.8 V, I_ss = 1 A
V_sS = 10 V, I_SS= 1 A
V_ss = 10 V, R_L = 10 Ω
I_ss ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.51
109
0.038
0.040
0.046
0.057
11
0.038
0.041
0.048
0.060
20
4
1
2
3
7
17
4
10
Unit
V
A
Ω
S
µs
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2
Document Number: 72956
S-60075Rev. B, 23-Jan-06